SOI Wafers

© Siltronic AG 2010

Silicon on Insulator

Thick Film Fusion Bonding

All Diameters:3” through 200mm:
Single- or Double Side Polished
CZ and FZ
Device Layer: Flatness <1µm <2µm <5µm
Buried Thermal Oxide:0,2µm to 2,4µm
Handle:Flatness <1µm up
Any Typ, Orientation, Res.
Thickness 300µm to 2000µm
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